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Transistor: N-MOSFET | SPLIT GATE TRENCH | unipolar | 60V | 56A | 42.5W

EB Kods: EB17022022

Ražotāja preces kods: 
YJD80G06A

Ražotājs, zīmols: 
YANGJIE TECHNOLOGY

 0,45 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySPLIT GATE TRENCH
Polarisationunipolar
Drain-source voltage60V
Drain current56A
Pulsed drain current240A
Power dissipation42.5W
CaseTO252
Gate-source voltage±20V
On-state resistance11mΩ
MountingSMD
Gate charge31nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced