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Transistor: N-MOSFET | SPLIT GATE TRENCH | unipolar | 60V | 56A | 42.5W
Transistor: N-MOSFET | SPLIT GATE TRENCH | unipolar | 60V | 56A | 42.5W
Code: EB17022022
Manufacturer's product code: YJD80G06A
Manufacturer's product code:
YJD80G06A
Manufacturer, Brand: YANGJIE TECHNOLOGY
Manufacturer, Brand:
YANGJIE TECHNOLOGY
0,45 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | SPLIT GATE TRENCH |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 56A |
Pulsed drain current | 240A |
Power dissipation | 42.5W |
Case | TO252 |
Gate-source voltage | ±20V |
On-state resistance | 11mΩ |
Mounting | SMD |
Gate charge | 31nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |