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Transistor: N-MOSFET | SPLIT GATE TRENCH | unipolar | 60V | 56A | 42.5W

EB Kood: EB17022022

Tootja kauba kood: 
YJD80G06A

Tootja, kaubamärk: 
YANGJIE TECHNOLOGY

 0,45 € 
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Saadaval tarnija laos >10 tk
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Product Properties

Type of transistorN-MOSFET
TechnologySPLIT GATE TRENCH
Polarisationunipolar
Drain-source voltage60V
Drain current56A
Pulsed drain current240A
Power dissipation42.5W
CaseTO252
Gate-source voltage±20V
On-state resistance11mΩ
MountingSMD
Gate charge31nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced