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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 24A | Idm: 85A | 150W

EB Kods: EB379806879

Ražotāja preces kods: 
B2M065120R

Ražotājs, zīmols: 
BASiC SEMICONDUCTOR

16,26 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current24A
Pulsed drain current85A
Power dissipation150W
CaseTO263-7
Gate-source voltage-4...18V
On-state resistance65mΩ
MountingSMD
Gate charge60nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal