Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 24A | Idm: 85A | 150W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 24A | Idm: 85A | 150W
EB Kods: EB379806879
Ražotāja preces kods: B2M065120R
Ražotāja preces kods:
B2M065120R
Ražotājs, zīmols: BASiC SEMICONDUCTOR
Ražotājs, zīmols:
BASiC SEMICONDUCTOR
17,22 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 24A |
| Pulsed drain current | 85A |
| Power dissipation | 150W |
| Case | TO263-7 |
| Gate-source voltage | -4...18V |
| On-state resistance | 65mΩ |
| Mounting | SMD |
| Gate charge | 60nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Features of semiconductor devices | Kelvin terminal |