Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 24A | Idm: 85A | 150W

EB Kood: EB379806879

Tootja kauba kood: 
B2M065120R

Tootja, kaubamärk: 
BASiC SEMICONDUCTOR

16,43 
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current24A
Pulsed drain current85A
Power dissipation150W
CaseTO263-7
Gate-source voltage-4...18V
On-state resistance65mΩ
MountingSMD
Gate charge60nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal