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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 24A | Idm: 85A | 150W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 24A | Idm: 85A | 150W
Code: EB379806879
Manufacturer's product code: B2M065120R
Manufacturer's product code:
B2M065120R
Manufacturer, Brand: BASiC SEMICONDUCTOR
Manufacturer, Brand:
BASiC SEMICONDUCTOR
16,66 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 24A |
Pulsed drain current | 85A |
Power dissipation | 150W |
Case | TO263-7 |
Gate-source voltage | -4...18V |
On-state resistance | 65mΩ |
Mounting | SMD |
Gate charge | 60nC |
Kind of package | tube |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |