Tulkot latviski
Transistor: N-MOSFET | GigaMOS™ | unipolar | 55V | 550A | Idm: 2kA | 830W
Transistor: N-MOSFET | GigaMOS™ | unipolar | 55V | 550A | Idm: 2kA | 830W
EB Kods: EB801717796
Ražotāja preces kods: MMIX1T550N055T2
Ražotāja preces kods:
MMIX1T550N055T2
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
59,14 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | GigaMOS™ |
| Technology | TrenchT2™ |
| Polarisation | unipolar |
| Drain-source voltage | 55V |
| Drain current | 550A |
| Pulsed drain current | 2kA |
| Power dissipation | 830W |
| Case | SMPD |
| Gate-source voltage | ±20V |
| On-state resistance | 1.3mΩ |
| Mounting | SMD |
| Gate charge | 595nC |
| Kind of channel | enhanced |
| Reverse recovery time | 100ns |