Tulkot latviski
Transistor: N-MOSFET | GigaMOS™ | unipolar | 55V | 550A | Idm: 2kA | 830W
Transistor: N-MOSFET | GigaMOS™ | unipolar | 55V | 550A | Idm: 2kA | 830W
EB Kood: EB801717796
Tootja kauba kood: MMIX1T550N055T2
Tootja kauba kood:
MMIX1T550N055T2
Tootja, kaubamärk: IXYS
Tootja, kaubamärk:
IXYS
59,11 €
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Saadaval tarnija laos >10 tk
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| Type of transistor | N-MOSFET |
| Technology | GigaMOS™ |
| Technology | TrenchT2™ |
| Polarisation | unipolar |
| Drain-source voltage | 55V |
| Drain current | 550A |
| Pulsed drain current | 2kA |
| Power dissipation | 830W |
| Case | SMPD |
| Gate-source voltage | ±20V |
| On-state resistance | 1.3mΩ |
| Mounting | SMD |
| Gate charge | 595nC |
| Kind of channel | enhanced |
| Reverse recovery time | 100ns |