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Transistor: N-MOSFET | GigaMOS™ | unipolar | 55V | 550A | Idm: 2kA | 830W
Transistor: N-MOSFET | GigaMOS™ | unipolar | 55V | 550A | Idm: 2kA | 830W
Code: EB801717796
Manufacturer's product code: MMIX1T550N055T2
Manufacturer's product code:
MMIX1T550N055T2
Manufacturer, Brand: IXYS
Manufacturer, Brand:
IXYS
59,35 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
| Type of transistor | N-MOSFET |
| Technology | GigaMOS™ |
| Technology | TrenchT2™ |
| Polarisation | unipolar |
| Drain-source voltage | 55V |
| Drain current | 550A |
| Pulsed drain current | 2kA |
| Power dissipation | 830W |
| Case | SMPD |
| Gate-source voltage | ±20V |
| On-state resistance | 1.3mΩ |
| Mounting | SMD |
| Gate charge | 595nC |
| Kind of channel | enhanced |
| Reverse recovery time | 100ns |