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Transistor: N-MOSFET x2 | unipolar | 20V | 1A | Idm: 4A | 350mW | SOT363

EB Kods: EB127408133

Ražotāja preces kods: 
PJT7800_R1_00001

Ražotājs, zīmols: 
PanJit Semiconductor

 0,60 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage20V
Drain current1A
Pulsed drain current4A
Power dissipation0.35W
CaseSOT363
Gate-source voltage±8V
On-state resistance0.4Ω
MountingSMD
Gate charge1.6nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced