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Transistor: N-MOSFET x2 | unipolar | 20V | 1A | Idm: 4A | 350mW | SOT363
Transistor: N-MOSFET x2 | unipolar | 20V | 1A | Idm: 4A | 350mW | SOT363
Code: EB127408133
Manufacturer's product code: PJT7800_R1_00001
Manufacturer's product code:
PJT7800_R1_00001
Manufacturer, Brand: PanJit Semiconductor
Manufacturer, Brand:
PanJit Semiconductor
0,60 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 20V |
Drain current | 1A |
Pulsed drain current | 4A |
Power dissipation | 0.35W |
Case | SOT363 |
Gate-source voltage | ±8V |
On-state resistance | 0.4Ω |
Mounting | SMD |
Gate charge | 1.6nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |