Tulkot latviski
Transistor: N-MOSFET x2 | unipolar | 20V | 1A | Idm: 4A | 350mW | SOT363
Transistor: N-MOSFET x2 | unipolar | 20V | 1A | Idm: 4A | 350mW | SOT363
EB Kood: EB127408133
Tootja kauba kood: PJT7800_R1_00001
Tootja kauba kood:
PJT7800_R1_00001
Tootja, kaubamärk: PanJit Semiconductor
Tootja, kaubamärk:
PanJit Semiconductor
0,60 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 20V |
Drain current | 1A |
Pulsed drain current | 4A |
Power dissipation | 0.35W |
Case | SOT363 |
Gate-source voltage | ±8V |
On-state resistance | 0.4Ω |
Mounting | SMD |
Gate charge | 1.6nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |