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Transistor: N-MOSFET | unipolar | 600V | 30A | Idm: 90A | 370W | TO247
Transistor: N-MOSFET | unipolar | 600V | 30A | Idm: 90A | 370W | TO247
Code: EB1698341012
Manufacturer's product code: R6030JNZ4C13
Manufacturer's product code:
R6030JNZ4C13
Manufacturer, Brand: ROHM SEMICONDUCTOR
Manufacturer, Brand:
ROHM SEMICONDUCTOR
12,69 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 600V |
Drain current | 30A |
Pulsed drain current | 90A |
Power dissipation | 370W |
Case | TO247 |
Gate-source voltage | ±30V |
On-state resistance | 143mΩ |
Mounting | THT |
Gate charge | 74nC |
Kind of package | tube |
Kind of channel | enhanced |