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Transistor: N-MOSFET | unipolar | 800V | 1.8A | Idm: 3.6A | 62.5W | ESD

Code: EB1436373769

Manufacturer's product code: 
SIHD2N80AE-GE3

Manufacturer, Brand: 
VISHAY

 2,25 € 
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage800V
Drain current1.8A
Pulsed drain current3.6A
Power dissipation62.5W
CaseDPAK
CaseTO252
Gate-source voltage±30V
On-state resistance2.5Ω
MountingSMD
Gate charge10.5nC
Kind of channelenhanced
VersionESD