Tulkot latviski
Transistor: N-MOSFET | unipolar | 800V | 1.8A | Idm: 3.6A | 62.5W | DPAK
Transistor: N-MOSFET | unipolar | 800V | 1.8A | Idm: 3.6A | 62.5W | DPAK
EB Kood: EB1436373769
Tootja kauba kood: SIHD2N80AE-GE3
Tootja kauba kood:
SIHD2N80AE-GE3
Tootja, kaubamärk: VISHAY
Tootja, kaubamärk:
VISHAY
2,25 €
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Saadaval tarnija laos >10 tk
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| Type of transistor | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 800V |
| Drain current | 1.8A |
| Pulsed drain current | 3.6A |
| Power dissipation | 62.5W |
| Case | DPAK |
| Case | TO252 |
| Gate-source voltage | ±30V |
| On-state resistance | 2.5Ω |
| Mounting | SMD |
| Gate charge | 10.5nC |
| Kind of channel | enhanced |
| Version | ESD |