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Transistor: N-MOSFET | Trench | unipolar | 60V | 0.19A | Idm: 1.2A | 830mW
Transistor: N-MOSFET | Trench | unipolar | 60V | 0.19A | Idm: 1.2A | 830mW
Code: EB202872731
Manufacturer's product code: 2N7002,215
Manufacturer's product code:
2N7002,215
Manufacturer, Brand: NEXPERIA
Manufacturer, Brand:
NEXPERIA
0,34 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 0.19A |
Pulsed drain current | 1.2A |
Power dissipation | 0.83W |
Case | SOT23 |
Case | TO236AB |
Gate-source voltage | ±30V |
On-state resistance | 5Ω |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |