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Transistor: N-MOSFET x2 | unipolar | 100V | 39A | Idm: 156A | 59.5W
Transistor: N-MOSFET x2 | unipolar | 100V | 39A | Idm: 156A | 59.5W
Code: EB890271306
Manufacturer's product code: WMB175DN10LG4
Manufacturer's product code:
WMB175DN10LG4
Manufacturer, Brand: WAYON
Manufacturer, Brand:
WAYON
1,08 €
excl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 100V |
Drain current | 39A |
Pulsed drain current | 156A |
Power dissipation | 59.5W |
Case | PDFN5060-8 |
Gate-source voltage | ±20V |
On-state resistance | 19.5mΩ |
Mounting | SMD |
Gate charge | 22.5nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhancement |