Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 60A | Idm: 190A | 375W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 60A | Idm: 190A | 375W
EB Kods: EB1942229851
Ražotāja preces kods: B2M032120Y
Ražotāja preces kods:
B2M032120Y
Ražotājs, zīmols: BASiC SEMICONDUCTOR
Ražotājs, zīmols:
BASiC SEMICONDUCTOR
24,93 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 60A |
Pulsed drain current | 190A |
Power dissipation | 375W |
Case | TO247PLUS-4 |
Gate-source voltage | -4...18V |
On-state resistance | 50mΩ |
Mounting | THT |
Gate charge | 40nC |
Kind of package | tube |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |