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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 60A | Idm: 190A | 375W

EB Kods: EB1942229851

Ražotāja preces kods: 
B2M032120Y

Ražotājs, zīmols: 
BASiC SEMICONDUCTOR

 26,80 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current60A
Pulsed drain current190A
Power dissipation375W
CaseTO247PLUS-4
Gate-source voltage-4...18V
On-state resistance50mΩ
MountingTHT
Gate charge40nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal