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Transistor: N/P-MOSFET | TrenchFET® | unipolar | complementary pair
Transistor: N/P-MOSFET | TrenchFET® | unipolar | complementary pair
EB Kods: EB768045946
Ražotāja preces kods: SI1016CX-T1-GE3
Ražotāja preces kods:
SI1016CX-T1-GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
0,60 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N/P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Kind of transistor | complementary pair |
Drain-source voltage | 20/-20V |
Drain current | 0.49/-0.49A |
Pulsed drain current | 2A |
Power dissipation | 0.14W |
Case | SC89 |
Case | SOT563 |
Gate-source voltage | ±8V |
On-state resistance | 396/756mΩ |
Mounting | SMD |
Gate charge | 2/2.5nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |