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Transistor: N/P-MOSFET | TrenchFET® | unipolar | complementary pair

EB Код: EB768045946

Код товара производителя: 
SI1016CX-T1-GE3

Производитель, бренд: 
VISHAY

 0,60  
НДС включен / gb
Ha складе поставщика >10 шт.
⛟ Доставка через 1-3 рабочих дня после оплаты. 
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Type of transistorN/P-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Kind of transistorcomplementary pair
Drain-source voltage20/-20V
Drain current0.49/-0.49A
Pulsed drain current2A
Power dissipation0.14W
CaseSC89
CaseSOT563
Gate-source voltage±8V
On-state resistance396/756mΩ
MountingSMD
Gate charge2/2.5nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate