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Transistor: N/P-MOSFET | TrenchFET® | unipolar | complementary pair

EB Kods: EB768045946

Ražotāja preces kods: 
SI1016CX-T1-GE3

Ražotājs, zīmols: 
VISHAY

0,62 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN/P-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Kind of transistorcomplementary pair
Drain-source voltage20/-20V
Drain current0.49/-0.49A
Pulsed drain current2A
Power dissipation0.14W
CaseSC89
CaseSOT563
Gate-source voltage±8V
On-state resistance396/756mΩ
MountingSMD
Gate charge2/2.5nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate