Tulkot latviski

Transistor: N-MOSFET | TrenchFET® | unipolar | 40V | 4.3A | Idm: 20A

EB Kods: EB1106487455

Ražotāja preces kods: 
SI2356DS-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,55 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage40V
Drain current4.3A
Pulsed drain current20A
Power dissipation1.7W
CaseSOT23
Gate-source voltage±12V
On-state resistance70mΩ
MountingSMD
Gate charge13nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced