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Transistor: N-MOSFET | TrenchFET® | unipolar | 40V | 4.3A | Idm: 20A
Transistor: N-MOSFET | TrenchFET® | unipolar | 40V | 4.3A | Idm: 20A
Code: EB1106487455
Manufacturer's product code: SI2356DS-T1-GE3
Manufacturer's product code:
SI2356DS-T1-GE3
Manufacturer, Brand: VISHAY
Manufacturer, Brand:
VISHAY
0,55 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | 40V |
Drain current | 4.3A |
Pulsed drain current | 20A |
Power dissipation | 1.7W |
Case | SOT23 |
Gate-source voltage | ±12V |
On-state resistance | 70mΩ |
Mounting | SMD |
Gate charge | 13nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |