Tulkot latviski

Transistor: IGBT | SiC SBD | 650V | 50A | 357W | TO247-3

EB Kods: EB1021135565

Ražotāja preces kods: 
BGH50N65HS1

Ražotājs, zīmols: 
BASiC SEMICONDUCTOR

18,87 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorIGBT
TechnologyField Stop
TechnologySiC SBD
TechnologyTrench
Collector-emitter voltage650V
Collector current50A
Power dissipation357W
CaseTO247-3
Gate-emitter voltage±20V
Pulsed collector current200A
MountingTHT
Gate charge308nC
Kind of packagetube
Turn-on time54ns
Turn-off time256ns
Features of semiconductor devicesintegrated anti-parallel diode