Tulkot latviski

Transistor: IGBT | 1.2kV | 35A | 230W | TO3PN

EB Kods: EB1486966665

Ražotāja preces kods: 
GT40QR21(STA1,E,D

Ražotājs, zīmols: 
TOSHIBA

 5,33 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
Collector-emitter voltage1.2kV
Collector current35A
Power dissipation230W
CaseTO3PN
Gate-emitter voltage±25V
Pulsed collector current80A
MountingTHT
Kind of packagetube
Turn-on time0.3µs
Turn-off time0.6µs
Features of semiconductor devicesintegrated anti-parallel diode