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Transistor: P-MOSFET | unipolar | -20V | -4.5A | Idm: -20A | 1.1W | SOT23

EB Kods: EB398000595

Ražotāja preces kods: 
SI2365EDS-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,53 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
Polarisationunipolar
Drain-source voltage-20V
Drain current-4.5A
Pulsed drain current-20A
Power dissipation1.1W
CaseSOT23
Gate-source voltage±8V
On-state resistance32mΩ
MountingSMD
Gate charge36nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate