Tulkot latviski

Transistor: P-MOSFET | unipolar | -20V | -4.5A | Idm: -20A | 1.1W | SOT23

EB Kood: EB398000595

Tootja kauba kood: 
SI2365EDS-T1-GE3

Tootja, kaubamärk: 
VISHAY

 0,53  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorP-MOSFET
Polarisationunipolar
Drain-source voltage-20V
Drain current-4.5A
Pulsed drain current-20A
Power dissipation1.1W
CaseSOT23
Gate-source voltage±8V
On-state resistance32mΩ
MountingSMD
Gate charge36nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate