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Transistor: P-MOSFET | unipolar | -20V | -4.5A | Idm: -20A | 1.1W | SOT23
Transistor: P-MOSFET | unipolar | -20V | -4.5A | Idm: -20A | 1.1W | SOT23
Code: EB398000595
Manufacturer's product code: SI2365EDS-T1-GE3
Manufacturer's product code:
SI2365EDS-T1-GE3
Manufacturer, Brand: VISHAY
Manufacturer, Brand:
VISHAY
0,53 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | P-MOSFET |
Polarisation | unipolar |
Drain-source voltage | -20V |
Drain current | -4.5A |
Pulsed drain current | -20A |
Power dissipation | 1.1W |
Case | SOT23 |
Gate-source voltage | ±8V |
On-state resistance | 32mΩ |
Mounting | SMD |
Gate charge | 36nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |