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Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -18A | Idm: -70A

EB Kods: EB1024262326

Ražotāja preces kods: 
SIS413DN-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,78 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-30V
Drain current-18A
Pulsed drain current-70A
Power dissipation33W
CasePowerPAK® 1212-8
Gate-source voltage±20V
On-state resistance13.2mΩ
MountingSMD
Gate charge110nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced