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Transistor: N-MOSFET | Trench™ | unipolar | 200V | 75A | Idm: 320A | 830W

EB Kods: EB569196818

Ražotāja preces kods: 
IXTQ130N20T

Ražotājs, zīmols: 
IXYS

 13,33 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyTrench™
Polarisationunipolar
Drain-source voltage200V
Drain current75A
Pulsed drain current320A
Power dissipation830W
CaseTO3P
Gate-source voltage±20V
On-state resistance16mΩ
MountingTHT
Gate charge150nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesthrench gate power mosfet
Reverse recovery time150ns