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Transistor: N-MOSFET | SiC | unipolar | 650V | 48A | Idm: 135A | 550W
Transistor: N-MOSFET | SiC | unipolar | 650V | 48A | Idm: 135A | 550W
EB Kods: EB837232827
Ražotāja preces kods: DIW065SIC049
Ražotāja preces kods:
DIW065SIC049
Ražotājs, zīmols: DIOTEC SEMICONDUCTOR
Ražotājs, zīmols:
DIOTEC SEMICONDUCTOR
18,85 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 650V |
| Drain current | 48A |
| Pulsed drain current | 135A |
| Power dissipation | 550W |
| Case | TO247-3 |
| Gate-source voltage | -5...18V |
| On-state resistance | 50mΩ |
| Mounting | THT |
| Gate charge | 128nC |
| Kind of package | tube |
| Kind of channel | enhanced |