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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 55A | Idm: 160A | 320.5W

EB Kods: EB991290362

Ražotāja preces kods: 
S2M0040120K-1

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 20,69 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current55A
Pulsed drain current160A
Power dissipation320.5W
CaseTO247-4
Gate-source voltage-5...20V
On-state resistance40mΩ
MountingTHT
Gate charge118nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal