Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 55A | Idm: 160A | 320.5W

EB Kood: EB991290362

Tootja kauba kood: 
S2M0040120K-1

Tootja, kaubamärk: 
SMC DIODE SOLUTIONS

 20,09  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current55A
Pulsed drain current160A
Power dissipation320.5W
CaseTO247-4
Gate-source voltage-5...20V
On-state resistance40mΩ
MountingTHT
Gate charge118nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal