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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 45A | Idm: 150A | 114W

EB Kods: EB552744324

Ražotāja preces kods: 
IMZ120R030M1HXKSA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

 39,62 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyCoolSiC™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current45A
Pulsed drain current150A
Power dissipation114W
CaseTO247-4
Gate-source voltage-7...23V
On-state resistance57mΩ
MountingTHT
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal