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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 33A | Idm: 85A | 250W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 33A | Idm: 85A | 250W
EB Kods: EB825283109
Ražotāja preces kods: B2M065120H
Ražotāja preces kods:
B2M065120H
Ražotājs, zīmols: BASiC SEMICONDUCTOR
Ražotājs, zīmols:
BASiC SEMICONDUCTOR
16,43 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 9 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 33A |
| Pulsed drain current | 85A |
| Power dissipation | 250W |
| Case | TO247-3 |
| Gate-source voltage | -4...18V |
| On-state resistance | 65mΩ |
| Mounting | THT |
| Gate charge | 60nC |
| Kind of package | tube |
| Kind of channel | enhanced |