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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 29A | Idm: 82A | 231W

EB Kods: EB623341892

Ražotāja preces kods: 
S2M0080120D

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 21,02 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current29A
Pulsed drain current82A
Power dissipation231W
CaseTO247-3
Gate-source voltage-10...25V
On-state resistance137mΩ
MountingTHT
Gate charge54nC
Kind of packagetube
Kind of channelenhanced