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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 29A | Idm: 80A | 207W

EB Kods: EB1686780942

Ražotāja preces kods: 
G3R75MT12D

Ražotājs, zīmols: 
GeneSiC SEMICONDUCTOR

18,52 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyG3R™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current29A
Pulsed drain current80A
Power dissipation207W
CaseTO247-3
Gate-source voltage-5...15V
On-state resistance75mΩ
MountingTHT
Gate charge54nC
Kind of packagetube
Kind of channelenhanced