Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 29A | Idm: 80A | 207W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 29A | Idm: 80A | 207W
EB Kood: EB1686780942
Tootja kauba kood: G3R75MT12D
Tootja kauba kood:
G3R75MT12D
Tootja, kaubamärk: GeneSiC SEMICONDUCTOR
Tootja, kaubamärk:
GeneSiC SEMICONDUCTOR
17,78 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Technology | G3R™ |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 29A |
| Pulsed drain current | 80A |
| Power dissipation | 207W |
| Case | TO247-3 |
| Gate-source voltage | -5...15V |
| On-state resistance | 75mΩ |
| Mounting | THT |
| Gate charge | 54nC |
| Kind of package | tube |
| Kind of channel | enhanced |