Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W
EB Kods: EB924465377
Ražotāja preces kods: B1M080120HK
Ražotāja preces kods:
B1M080120HK
Ražotājs, zīmols: BASiC SEMICONDUCTOR
Ražotājs, zīmols:
BASiC SEMICONDUCTOR
23,93 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 27A |
Pulsed drain current | 80A |
Power dissipation | 241W |
Case | TO247-4 |
Gate-source voltage | -5...20V |
On-state resistance | 80mΩ |
Mounting | THT |
Gate charge | 149nC |
Kind of package | tube |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |