Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W
EB Kood: EB924465377
Tootja kauba kood: B1M080120HK
Tootja kauba kood:
B1M080120HK
Tootja, kaubamärk: BASiC SEMICONDUCTOR
Tootja, kaubamärk:
BASiC SEMICONDUCTOR
24,54 €
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Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 27A |
Pulsed drain current | 80A |
Power dissipation | 241W |
Case | TO247-4 |
Gate-source voltage | -5...20V |
On-state resistance | 80mΩ |
Mounting | THT |
Gate charge | 149nC |
Kind of package | tube |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |