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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W
Code: EB924465377
Manufacturer's product code: B1M080120HK
Manufacturer's product code:
B1M080120HK
Manufacturer, Brand: BASiC SEMICONDUCTOR
Manufacturer, Brand:
BASiC SEMICONDUCTOR
24,54 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 27A |
Pulsed drain current | 80A |
Power dissipation | 241W |
Case | TO247-4 |
Gate-source voltage | -5...20V |
On-state resistance | 80mΩ |
Mounting | THT |
Gate charge | 149nC |
Kind of package | tube |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |