Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 21A | Idm: 125A | 28W

EB Kods: EB1280849657

Ražotāja preces kods: 
NTH4L080N120SC1

Ražotājs, zīmols: 
ONSEMI

22,04 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current21A
Pulsed drain current125A
Power dissipation28W
CaseTO247-4
Gate-source voltage-15...25V
On-state resistance80mΩ
MountingTHT
Gate charge56nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal