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Transistor: N-MOSFET | unipolar | 100V | 4.7A | Idm: 30A | 7.5W | TO252

EB Kods: EB596828826

Ražotāja preces kods: 
DMN10H220LK3-13

Ražotājs, zīmols: 
DIODES INCORPORATED

 0,60 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage100V
Drain current4.7A
Pulsed drain current30A
Power dissipation7.5W
CaseTO252
Gate-source voltage±20V
On-state resistance0.25Ω
MountingSMD
Gate charge6.7nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced