Tulkot latviski
Transistor: N-MOSFET | unipolar | 100V | 4.7A | Idm: 30A | 7.5W | TO252
Transistor: N-MOSFET | unipolar | 100V | 4.7A | Idm: 30A | 7.5W | TO252
EB Kood: EB596828826
Tootja kauba kood: DMN10H220LK3-13
Tootja kauba kood:
DMN10H220LK3-13
Tootja, kaubamärk: DIODES INCORPORATED
Tootja, kaubamärk:
DIODES INCORPORATED
0,60 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 100V |
Drain current | 4.7A |
Pulsed drain current | 30A |
Power dissipation | 7.5W |
Case | TO252 |
Gate-source voltage | ±20V |
On-state resistance | 0.25Ω |
Mounting | SMD |
Gate charge | 6.7nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |