Tulkot latviski
Transistor: N-MOSFET | Trench | unipolar | 60V | 0.17A | Idm: 0.9A | 0.31W
Transistor: N-MOSFET | Trench | unipolar | 60V | 0.17A | Idm: 0.9A | 0.31W
EB Kods: EB721385528
Ražotāja preces kods: 2N7002NXBKR
Ražotāja preces kods:
2N7002NXBKR
Ražotājs, zīmols: NEXPERIA
Ražotājs, zīmols:
NEXPERIA
0,24 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 0.17A |
Pulsed drain current | 0.9A |
Power dissipation | 0.31W |
Case | SOT23 |
Case | TO236AB |
Gate-source voltage | ±20V |
On-state resistance | 5.7Ω |
Mounting | SMD |
Gate charge | 1nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |