Tulkot latviski

Transistor: N-MOSFET | Trench | unipolar | 60V | 0.17A | Idm: 0.9A | 0.31W

EB Kods: EB721385528

Ražotāja preces kods: 
2N7002NXBKR

Ražotājs, zīmols: 
NEXPERIA

0,20 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Product Properties

Type of transistorN-MOSFET
TechnologyTrench
Polarisationunipolar
Drain-source voltage60V
Drain current0.17A
Pulsed drain current0.9A
Power dissipation0.31W
CaseSOT23
CaseTO236AB
Gate-source voltage±20V
On-state resistance5.7Ω
MountingSMD
Gate charge1nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate