Tulkot latviski
Transistor: N-MOSFET | Trench | unipolar | 60V | 0.17A | Idm: 0.9A | 0.31W
Transistor: N-MOSFET | Trench | unipolar | 60V | 0.17A | Idm: 0.9A | 0.31W
EB Kood: EB721385528
Tootja kauba kood: 2N7002NXBKR
Tootja kauba kood:
2N7002NXBKR
Tootja, kaubamärk: NEXPERIA
Tootja, kaubamärk:
NEXPERIA
0,25 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
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Type of transistor | N-MOSFET |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 0.17A |
Pulsed drain current | 0.9A |
Power dissipation | 0.31W |
Case | SOT23 |
Case | TO236AB |
Gate-source voltage | ±20V |
On-state resistance | 5.7Ω |
Mounting | SMD |
Gate charge | 1nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |