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Transistor: N-MOSFET | GigaMOS™ | unipolar | 300V | 102A | Idm: 440A
Transistor: N-MOSFET | GigaMOS™ | unipolar | 300V | 102A | Idm: 440A
EB Kods: EB1385600272
Ražotāja preces kods: MMIX1F160N30T
Ražotāja preces kods:
MMIX1F160N30T
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
57,30 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | GigaMOS™ |
| Technology | HiPerFET™ |
| Technology | Trench™ |
| Polarisation | unipolar |
| Drain-source voltage | 300V |
| Drain current | 102A |
| Pulsed drain current | 440A |
| Power dissipation | 570W |
| Case | SMPD |
| Gate-source voltage | ±20V |
| On-state resistance | 20mΩ |
| Mounting | SMD |
| Gate charge | 367nC |
| Kind of channel | enhanced |
| Reverse recovery time | 200ns |