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Transistor: N-MOSFET | GigaMOS™ | unipolar | 300V | 102A | Idm: 440A

EB Kods: EB1385600272

Ražotāja preces kods: 
MMIX1F160N30T

Ražotājs, zīmols: 
IXYS

56,89 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyGigaMOS™
TechnologyHiPerFET™
TechnologyTrench™
Polarisationunipolar
Drain-source voltage300V
Drain current102A
Pulsed drain current440A
Power dissipation570W
CaseSMPD
Gate-source voltage±20V
On-state resistance20mΩ
MountingSMD
Gate charge367nC
Kind of channelenhanced
Reverse recovery time200ns