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Transistor: N-MOSFET | GigaMOS™ | unipolar | 300V | 102A | Idm: 440A
Transistor: N-MOSFET | GigaMOS™ | unipolar | 300V | 102A | Idm: 440A
Code: EB1385600272
Manufacturer's product code: MMIX1F160N30T
Manufacturer's product code:
MMIX1F160N30T
Manufacturer, Brand: IXYS
Manufacturer, Brand:
IXYS
56,96 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | GigaMOS™ |
Technology | HiPerFET™ |
Technology | Trench™ |
Polarisation | unipolar |
Drain-source voltage | 300V |
Drain current | 102A |
Pulsed drain current | 440A |
Power dissipation | 570W |
Case | SMPD |
Gate-source voltage | ±20V |
On-state resistance | 20mΩ |
Mounting | SMD |
Gate charge | 367nC |
Kind of channel | enhanced |
Reverse recovery time | 200ns |