Tulkot latviski
Module: IGBT | diode/transistor | boost chopper | Urmax: 650V | Ic: 10A
Module: IGBT | diode/transistor | boost chopper | Urmax: 650V | Ic: 10A
EB Kods: EB1296616850
Ražotāja preces kods: GD10PJX65F1S
Ražotāja preces kods:
GD10PJX65F1S
Ražotājs, zīmols: STARPOWER SEMICONDUCTOR
Ražotājs, zīmols:
STARPOWER SEMICONDUCTOR
35,95 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of module | IGBT |
| Semiconductor structure | diode/transistor |
| Topology | boost chopper |
| Topology | IGBT three-phase bridge OE output |
| Topology | NTC thermistor |
| Topology | three-phase diode bridge |
| Max. off-state voltage | 650V |
| Collector current | 10A |
| Case | F1.1 |
| Electrical mounting | Press-in PCB |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 20A |
| Technology | Trench FS IGBT |
| Mechanical mounting | screw |